Iko kushandiswa kweMosfet, IGBT uye vacuum triode mune indasitiri induction yekudziya muchina (vira)
Mazuvano Induction Heating Power tekinoroji yekugovera inonyanya kutsamira pamhando nhatu dzemakombi emagetsi maturusi: MOSFET, IGBT uye vacuum triode, imwe neimwe inobata basa risingadzokerike mune chaiyo application mamiriro. MOSFET yave sarudzo yekutanga mundima yekudziya chaiko nekuda kwehunhu hwayo hwepamusoro-frequency hunhu (100kHz-1MHz), uye inonyanya kukodzera kune yakaderera-simba uye yakakwirira-chaiyo mamiriro akadai sekunyunguduka kwezvishongo uye zvemagetsi component welding. Pakati pazvo, SiC/GaN MOSFET yakawedzera kushanda zvakanaka kusvika kupfuura 90%, asi simba rayo rinogumira (kazhinji
Mumunda wepakati-frequency uye yakakwirira-simba (1kHz-100kHz), IGBT yakaratidza mukana wakasimba wekukwikwidza. Seyo musimboti mudziyo weindasitiri yekunyungudutsa mavira uye simbi Kupisa Kurapa mitsara yekugadzira, IGBT modules inogona kuwana nyore MW-level simba kubuda. Tekinoroji yayo yakakura uye yakanakisa mutengo-inoshanda inoita kuti ive sarudzo yakajairika yekugadzirisa zvinhu zvakaita sesimbi nealuminium alloys. Nekuunzwa kweSiC tekinoroji, iyo frequency yekushandisa yechizvarwa chitsva cheIGBT yakapfuura 50kHz, ichisimbisa hutongi hwayo hwemusika mune yepakati-frequency bhendi.
Mune yekupedzisira-yepamusoro-frequency uye yakakwirira-simba mamiriro (1MHz-30MHz), vacuum triodes ichiri kuchengetedza isingazununguke chinzvimbo. Kunyangwe iri yakakosha kunyungudutsa simbi, kugadzirwa kweplasma, kana kutepfenyura michina yekufambisa, vacuum triodes inogona kupa MW-level yakagadzikana magetsi kubuda. Yayo yakasarudzika yakakwira-voltage kuramba uye yakapusa dhiraivha dhizaini inoita kuti ive sarudzo yakanaka yekugadzira simbi inoshanda senge titanium uye zirconium, kunyangwe yakaderera kushanda kwayo (50% -70%) uye yakakwirira yekuchengetedza mitengo.
Ikozvino yekuvandudza tekinoroji inoratidza maitiro akajeka ekusangana: MOSFET inoramba ichipinda mukati meyakanyanya-frequency uye yakakwirira-simba masimba kuburikidza neSiC/GaN tekinoroji; IGBT inoenderera mberi nekuwedzera bhendi yekushanda frequency kuburikidza nekugadzirwa kwezvinhu; nepo vacuum machubhu anotarisana nemakwikwi ekumanikidzwa kubva kune yakasimba-nyika zvishandiso uku achichengetedza avo ekupedzisira-yakakwirira frequency mabhenefiti. Iyi shanduko yetekinoroji iri kugadziridza mamiriro eindasitiri emagetsi ekudziya emagetsi.
Mukusarudza chaiko, mainjiniya anofanirwa kunyatso funga nezvezvinhu zvitatu zvakakura zve frequency, simba uye hupfumi: MOSFET inofarirwa yakakwirira-frequency uye yakaderera-simba, IGBT inosarudzirwa yepakati-frequency uye yakakwirira-simba, uye vacuum triodes ichiri kudikanwa kune Ultra-yakakwirira frequency uye yakakwirira simba. Nekufambira mberi kwehupamhi-bandgap semiconductor tekinoroji, iyi sarudzo inogona kuchinja, asi mune ramangwana rinoonekwa, iwo matatu marudzi ezvishandiso acharamba achiita basa rakakosha munzvimbo dzawo dzemubairo, uye pamwe chete kusimudzira kusimudzira tekinoroji yekudziya tekinoroji kune imwe nzira inoshanda uye chaiyo.
